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PDF PTFC262157FH Data sheet ( Hoja de datos )
| Número de pieza | PTFC262157FH | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFC262157FH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157FH LDMOS FET is designed for use in Doherty
cellular power applications in the 2620 MHz to 2690 MHz frequency
band. Input and output matching have been optimized for maximum
performance as the peak side transistor in a Doherty amplifier. Other
features include a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFC262157FH
Package H-34288G-4/2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21 50
20 40
19 30
18 Gain
17
16
32
Efficiency
36 40 44 48
Output Power (dBm)
20
10
c262157sh-gr1
52
0
Features
• Broadband internal matching, optimized for Doherty
peak side
• Wide video bandwidth
• Typical single-carrier WCDMA performance, 2690
MHz, 28 V, 10 dB PAR @ 0.01% CCDR
- Output power at P1dB = 50 W
- Efficiency = 29%
- Gain = 19.5 dB
- ACPR = –31.5 dBc at 2690 MHz
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR
@0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Gps
18.0 19.5
—
dB
Drain Efficiency
Adjacent Channel Power Ratio
hD
ACPR
27 29
— –31.5
—
–30
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-21
1 page  
Typical Performance (cont.)
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2620 MHz
21
VDD = 24 V
20
VDD = 28 V
VDD = 32 V
19
60
50
40
18 Gain
17
30
20
16 10
Efficiency
15
c262157sh-gr9
0
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2690 MHz
21 VDD = 24 V
VDD = 28 V
20 VDD = 32 V
60
50
19 40
18 Gain
30
17 20
16 10
Efficiency
15
c262157sh-gr12
0
34
36
38
40
42
44
46
48
50
52
54
56c262157sh-gr11
Output Power (dBm)
PTFC262157FH
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2655 MHz
21 VDD = 24 V
VDD = 28 V
20 VDD = 32 V
60
50
19
18 Gain
40
30
17 20
16
Efficiency
10
15
c262157sh-gr11
0
34 36 38 40 42 44 46 48 50 52 54 56c262157sh-gr10
Output Power (dBm)
Data Sheet
5 of 10
Rev. 03.1, 2016-06-21
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFC262157FH.PDF ] | |
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