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Número de pieza | PTFC261402FC | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTFC261402FC (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! PTFC261402FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24 60
Efficiency
20 Gain
40
16 20
12
PAR @ 0.01% CCDF
8
0
-20
4 -40
0
33 38 43 48
Average Output Power (dBm)
c261402fc_gr1
-60
53
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P1dB = 140 W
- Efficiency = 50%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Efficiency = 30.5%
• Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (combined outputs, tested in Infineon production test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol Min Typ Max Unit
Gps 17 18 — dB
D
23.5 25
—
%
ACPR
— –34 –31 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2016-06-21
1 page Typical Performance (cont.)
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
Return Loss
-5
-10 -10
-15 -15
-20
-25 ACP Up
-20
-25
-30
2570
2610
2650
2690
Frequency (MHz)
c261402fc_gr13
-30
2730
PTFC261402FC
CW Performance
VDD = 28 V, IDQ = 900 mA
20 60
19 Gain
50
40
18
30
17
Efficiency
16
2620 MHz
2655 MHz
2690 MHz
20
10
15
c261402f c_gr14
0
33 35 37 39 41 43 45 47 49 51 53
Output Power (dBm)
CW Performance
at selected VDD, (single side)
IDQ = 900 mA, ƒ = 2620 MHz
20 VDD = 32 V
VDD = 28 V
19 VDD = 24 V
55
45
18
Gain
17
35
25
16
Efficiency
15
15
c261402f c_gr15
5
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
CW Performance
at selected VDD, (single side)
IDQ = 900 mA, ƒ = 2655 MHz
20 VDD = 32 V
VDD = 28 V
VDD = 24 V
19
Gain
18
17
Efficiency
16
60
50
40
30
20
10
15
c261402f c_gr16
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Data Sheet
5 of 10
Rev. 05, 2016-06-21
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PTFC261402FC.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFC261402FC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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