|
|
PDF PTVA093002TC Data sheet ( Hoja de datos )
| Número de pieza | PTVA093002TC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTVA093002TC (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
PTVA093002TC
Thermally-Enhanced High Power RF LDMOS FET
300 W, 50 V, 703 – 960 MHz
Description
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in
multi-standard cellular power amplifier applications, it can be used as
single-ended or in a Doherty configuration. It features dual-path design,
input matching, and a thermally-enhanced surface-mount package.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA093002TC
Package H-49248H-4, formed leads
Single-carrier 3GPP WCDMA
VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz
3.84 MHz bandwidth, 10 dB PAR
24
20
Gain
16
Efficiency
60
40
20
12 0
8
PAR @ 0.01% CCDF
4
-20
-40
0
25
a093002tc-gr1a
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Typical CW performance in a combined-lead
50-ohm single-ended fixture, 780 MHz, 50 V
- Output power at P1dB = 158 W
- Gain = 18.2 dB
- Efficiency = 52%
• Typical pulsed CW performance in a combined-lead
50-ohm single-ended fixture, 870 MHz, 50 V
- Output power at P3dB = 280 W
- Gain = 16.2 dB
- Efficiency = 50%
• Integrated ESD protection, Human Body Model
class 2 (per JESD22-A114)
• Capable of withstanding a 10:1 load mismatch at
50 V, 63 W (CW) output power
• Low thermal resistance
• Pb-free and RoHS compliant
RF Specifications
Single-carrier WCDMA Characteristics (device with flat leads tested in an Infineon Doherty production test fixture)
VDD = 50 V, IDQ = 400 mA, VGSpeak = 1.9 V, POUT = 63 W average, ƒ = 803 MHz.
3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
ηD
ACPR
17.5 18.5
40 45
— –34
—
—
–32
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2014-06-16
1 page  
Typical Performance (cont.)
CW Performance
at selected VDD
IDQ = 400 mA, ƒ = 803 MHz
25
Efficiency
20
Gain
60
40
15 20
VDD = 46 V
VDD = 50 V
VDD = 54 V
10
a093002tc-gr6c
0
27 31 35 39 43 47 51 55
Output Power (dBm)
See next page for Load Pull
PTVA093002TC
CW Small Signal Performance
VDD = 50 V, IDQ = 400 mA
20
Gain
18
0
-5
16 -10
Return Loss
14 -15
12
700
750 800 850
Frequency (MHz)
a093002tc-gr7
-20
900
Data Sheet
5 of 10
Rev. 04, 2014-06-16
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTVA093002TC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTVA093002TC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |