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부품번호 | PTVA120501EA 기능 |
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기능 | Thermally-Enhanced High Power RF LDMOS FET | ||
제조업체 | Infineon | ||
로고 | |||
전체 10 페이지수
PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60
55
50
45
40
35
30
18
70
Efficiency
60
Output Power
50
40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22 26 30 34 38
PIN (dBm)
Features
• Broadband input matching
• High gain and efficiency
• Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
- Output power at P1dB = 54 W
- Efficiency = 55%
- Gain = 16 dB
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
VDD = 50 V, IDQ = 50 mA, POUT = 50 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 10 % duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
Gps
hD
IRL
Min
16.5
46
—
Typ
17
50
–10
Max
—
—
–7
Unit
dB
%
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-05-26
Typical Performance (cont.)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60
55
50
45
40
35
30
18
70
Efficiency
60
Output Power
50
40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22 26 30 34 38
PIN (dBm)
PTVA120501EA
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
19
18
Gain
17
16
15
14
18
1200 MHz
1300 MHz
1400 MHz
22 26 30
PIN (dBm)
34
a120501ea_g1-2
38
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
300 µs pulse width, 10% duty cycle
18.0
17.8
Gain
58
56
17.6 54
17.4 52
Efficiency
17.2
1150
1200 1250 1300 1350
Frequency (MHz)
a120501ea_g1-3
50
1400 1450
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, POUT = 50 W,
300 µs pulse width, 10% duty cycle
0.25 -5
0.20
0.15
Power Droop
-10
-15
0.10
0.05
IRL
-20
-25
0.00
1150
1200
1250 1300 1350
Frequency (MHz)
a120501ea_g1-4
-30
1400 1450
Data Sheet
4 of 10
Rev. 02.1, 2016-05-26
4페이지 Reference Circuit , 1200 – 1400 MHz
RO3010, .025 (105)
R801
S3
R804
C801
R803 C803
C802
R101
S2 R802
R102
C103
S1
C102
C106
RF_IN
C101
C104
C105
PTVA120501EA_IN_04
Reference circuit assembly diagram (not to scale)
PTVA120501EA
C211
RO3010, .025 (105)
C206
C215
VDD
R202
C207
C213
C209
C210
C204
C208
C203
C214
C205
C201
R201 C202
RF_OUT
VDD
C212
PTVA120501EA_OUT_04
a120501ea_CD_09-24-2013
Data Sheet
7 of 10
Rev. 02.1, 2016-05-26
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
PTVA120501EA | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |