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PDF PXAC201202FC Data sheet ( Hoja de datos )
| Número de pieza | PXAC201202FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PXAC201202FC
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 1800 – 2200 MHz
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1800 to 2200 MHz
frequency band. Its asymmetric and dual-path design make it ideal for
Doherty amplifier designs. It features input and output matching, and
a thermally-enhanced package with earless flange. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PXAC201202FC
Package H-37248-4
Single-carrier 3GPP WCDMA
VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz
3.84 MHz bandwidth
24 60
20 Efficiency 40
16 Gain
20
12
8 PAR @ 0.01% CCDF
0
-20
4 -40
0
30
35
40
45
c201202fc-v2-gr1a
-60
50
Average Output Power (dBm)
RF Specifications, 1880 MHz
Features
• Broadband internal matching
• Asymmetric Doherty design
- Main: P1dB = 35 W Typ
- Peak: P1dB = 80 W Typ
• Broadband internal matching
• CW performance in a Doherty configuration,
1805 MHz, 28 V
- Output power = 100 W P1dB
- Gain = 17.3 dB at 17.8 W Avg.
- Efficiency = 46% at 17.8 W Avg.
• CW performance in a Doherty configuration,
2100 MHz, 28 V
- Output power = 15.8 W Avg.
- Gain = 15.5 dB
- Efficiency = 46%
• Capable of handling 10:1 VSWR @ 28 V,
16 W (CW) output power
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)
VDD = 28 V, VGS(peak) = 1.4 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band-
width, 10 dB PAR @0.01% probability on CCDF.
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
16 17 — dB
43 46
—
%
Adjacent Channel Power Ratio
ACPR
— –29 –26 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05.1, 2016-06-22
1 page  
Typical Performance (cont.)
35
30
25
20
15
10
5
0
25
CW Performance
at selected VDD
IDQ = 240 mA, ƒ = 1880 MHz
Efficiency
70
60
Gain
50
40
30
VDD = 32 V
VDD = 28V
VDD = 24V
20
10
c201202fc-v2-gr6c
0
30 35 40 45 50 55
Output Power (dBm)
See next page for load pull performance
PXAC201202FC
Small Signal CW
Gain & Input Return Loss, single side
VDD = 28 V, IDQ = 350 mA
20 -2
18 Gain
16
-6
-10
14
12
1800
-14
Return Loss
1825
1850
1875
Frequency (MHz)
c201202fc-v2-gr7
-18
1900
Data Sheet
5 of 10
Rev. 05.1, 2016-06-22
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PXAC201202FC.PDF ] | |
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