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PDF PXAC261002FC Data sheet ( Hoja de datos )
| Número de pieza | PXAC261002FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXAC261002FC
Thermally-Enhanced High Power RF LDMOS FET
100 W, 28 V, 2490 – 2690 MHz
Description
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric
design intended for use in multi-standard cellular power amplifier
applications in the 2496 to 2690 MHz frequency band. Features
include dual-path design, high gain and a thermally-enhanced pack-
age with earless flanges. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PXAC261002FC
Package H-37248-4
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,
ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
17 60
16
Gain
15
50
40
14 30
13 20
12 Efficiency
10
11
29
c261002fc_g1
0
33 37 41 45 49
Output Power (dBm)
Features
• Broadband internal input and output matching
• Asymmetric design
- Main: P1dB = 40 W Typ
- Peak: P1dB = 70 W Typ
• Typical Pulsed CW performance, 2590 MHz, 26 V,
160 µs, 10% duty cycle, Doherty Configuration
- Output power at P1dB = 46.5 dBm
- Output power at P3dB = 50.1 dBm
• Capable of handling 10:1 VSWR @28 V, 100 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)
VDD = 26 V, IDQ = 210 mA, POUT = 18 W avg, VGS2 = 1.4 V, ƒ1 = 2550 MHz, ƒ2 = 2590 MHz, 3GPP signal, 3.84 MHz channel
bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Output PAR at 0.01% probability on CCDF
(one-carrier WCDMA, 2585 MHz, 10 dB PAR)
Gps
ηD
IMD
OPAR
14.1 15.1
46 49
— –22
7.5 —
—
—
–21
—
dB
%
dBc
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 03.3, 2016-06-15
1 page  
Reference Circuit, 2545 – 2595 MHz
RO4350, .020 (194)
VGS
C106
RF_IN
R102
S1
VGSPK
C101
PXAC261002FC_IN_02_D
Reference circuit assembly diagram (not to scale)
C107
R103
C105
C104
C103
R101
C102
PXAC261002FC
RO4350, .020 (60)
C210 C208
C209
VDD
C211
C213
C212
C207
C202
C206
RF_OUT
C201
C203
C205
VDD
C204
02_D
PXAC261002FC_OUT
Pxac261002fc_CD_01-28-2014
Data Sheet
5 of 8
Rev. 03.3, 2016-06-15
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PXAC261002FC.PDF ] | |
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