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PDF CS60N04A4 Data sheet ( Hoja de datos )
| Número de pieza | CS60N04A4 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Trench MOSFET
CS60N04 A4
○R
General Description：
CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is
obtained by advanced trench Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is TO-252, which accords with the
RoHS standard.
Features：
l Rds(on) =8.5mΩ @VGS=10V , ID=60A
l High Performance Trench Technology for extremely lows rdson
l High Power and Current Handing Capability
l 100% Avalanche Energy Test
l 40V@ TJ =150°
VDSS
40 V
ID 60 A
PD(TC=25℃)
52
W
RDS(ON)Typ
8.5 mΩ
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
40
60
36
240
±20
190
15
52
0.4
–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 1 of 7 2015V01
1 page  
CS60N04 A4
○R
50
49
48
47
46
45
25
Note：
1. Vgs = 10V
2. Id= 250uA
50
75
100
125
TJ,Junction Temperature [℃ ]
150
17
15
13
11
9
7
25
Note：
1. Vgs = 10V
2. Id= 60A
50 75 100 125
TJ,Junction Temperature [℃ ]
150
55
Note：
1. VDD = 5V
45 2. 250us Pulse Test
Tj = 25℃
35
25
Tj = 150 ℃
15
5
3568
VGS,Gate-to-Source Voltage [V]
10
1000
100
10ms
10
Operation in This Area
is Limited by RDS(on)
1
Single Pulse
Tc=25℃
100μs
1ms
DC
0.1
0.1
1 10
VDS,Drain-to-Source Voltage,V
100
Duty Cycle - Descending Order
1 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
RθJC = 2.4 ℃ /w
0.01
1.E-05
1.E-04
1.E-03
1.E-02
Rectangular Pulse Duration [sec]
1.E-01
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 5 of 7 2015V01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CS60N04A4.PDF ] | |
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