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PDF CS50N20ANH Data sheet ( Hoja de datos )
| Número de pieza | CS50N20ANH | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS50N20 ANH
○R
General Description：
CS50N20 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P（N）, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.045Ω)
l Low Gate Charge (Typical Data:150nC)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
IAS a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
200
50
300
0.045
Rating
200
50
38.5
200
±20
350
Figure 8
5.0
300
2.0
175，–55 to 175
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2015V01
1 page  
CS50N20 ANH
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 2015 V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS50N20ANH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS50N20ANH | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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