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부품번호 | CS8N80FA9H 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS8N80F A9H
○R
General Description:
CS8N80F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤1.25Ω)
l Low Gate Charge (Typical Data:48nC)
l Low Reverse transfer capacitances(Typical:17pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
800
8
50
1.1
Rating
800
8
5.4
32
±30
950
85
4.1
5.0
50
0.4
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
CS8N80F A9H
○R
Characteristics Curve:
100 63
54
10
45
100μs
36
1 1ms
27
10ms
0.1 18
DC 9
0.01
1
10 100 1000
Vds , Drain-to-Source Voltage , Volts
10000
Figure 1 Maximum Forward Bias Safe Operating Area
10
8
6
4
0
0 25 50 75 100 125 150
Tc , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
14
VGS=10V
12
10 VGS=9V
8
6
VGS=8V
VGS=7V
4
2
2 VGS=6V
0
0 25 50 75 100 125 150
Tc , Case Temperature ,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
0
0
5 10 15 20 25 30
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
35
50%
20%
10%
0.1
5%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10 2015V01
1
4페이지 Test Circuit and Waveform
CS8N80F A9H
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 7 of 10 2015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
CS8N80FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS8N80FA9H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |