|
|
|
부품번호 | CS7N60A4R 기능 |
|
|
기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS7N60 A4R
○R
General Description:
CS7N60 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤1.3Ω)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:5.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600
7
100
1.0
Rating
600
7
4.4
28
±30
400
5.0
100
0.8
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
Characteristics Curve:
100
CS7N60 A4R
120
○R
10
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED
TC=25℃ Single Pulse
100us
1ms
10ms
DC
0 .0 1
1
Figure
10.5
10 100 1000
V ds , D rain-to-Source V oltage , V olts
1 Maximum Forward Bias Safe Operating Area
7
3.5
90
60
30
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
14
250us Pluse Test
Tc = 25℃
10.5
VGS=10V
VGS=7V
7
VGS=5V
VGS=6V
3.5 VGS=4.5V
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
0
0
5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
25
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 4 of 1 0 20 15V0 1
4페이지 Test Circuit and Waveform
CS7N60 A4R
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 7 of 1 0 20 15V0 1
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS7N60A4R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CS7N60A4R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |