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부품번호 | CS7N80A8 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS7N80 A8
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General Description:
CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the
RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤1.8Ω )
l Low Gate Charge (Typical Data:34nC)
l Low Reverse transfer capacitances(Typical:12pF)
l 100% Single Pulse avalanche energy Test
Applications:
ATX Power、LED Power.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
800
7
120
1.5
Rating
800
7
4
28
±30
150
20
2
5.0
120
0.96
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
CS7N80 A8
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Characteristics Curve:
100
10
1
OPERATION IN THIS AREA
0.1
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
100μs
1ms
10ms
DC
0.01
1
10
100
1000
10000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
7.5
6
4.5
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tc , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
14
12 VGS=10V
10 VGS=9V
8
3
1.5
0
0 25 50 75 100 125 150
Tc , Case Temperature ,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
6
VGS=8V
VGS=7V
4
2 VGS=6V
0
0 5 10 15 20 25 30
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
35
50%
20%
10%
0.1
5%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS CO., LTD. Pa ge 4 of 1 0 2 015V01
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4페이지 CS7N80 A8
Test Circuit and Waveform
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WUXI CHI NA RESOUR CES HUAJ I NG M I CROELECTRONI CS CO., LTD. Pa ge 7 of 1 0 2 015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS7N80A8.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CS7N80A8 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |