|
|
|
부품번호 | CS840FA9H 기능 |
|
|
기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS840F A9H
○R
General Description:
CS840F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
500
8
45
0.57
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.75Ω)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:18pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
500
8
6.2
32
±30
620
60
3.5
5
45
0.36
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
CS840F A9H
○R
Characteristics Curve:
100
10
1
OPERATION IN THIS AREA
0.1
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
DC
100μs
1ms
10ms
45
40
30
20
10
0.01
1 10 100 1000
Vds,Drain Source Voltage,Volts
Figure 1 Maximum Forward Bias Safe Operating Area
9
8
7
6
0
0
Figure
25 50 75 100 125 150
Tc , Case Temperature , C
2 Maximum Power Dissipation vs Case Temperature
16
VGS=10V
12
VGS=8V
8
5 VGS=7V
4
4 VGS=6V
3
0
25 50 75 100
Tc , Case Temperature ,C
125
150
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
0
0
10 20 30 40
Vds,Drain Source Voltage,Volts
Figure 4 Typical Output Characteristics
50
50%
20%
10%
0.1
5%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10 2015V01
1
4페이지 CS840F A9H
Test Circuit and Waveform
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 7 of 10 2015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS840FA9H.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CS840FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS840FA9H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |