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부품번호 | 8TQ080 기능 |
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기능 | Schottky Rectifier ( Diode ) | ||
제조업체 | SANGDEST MICROELECTRONICS | ||
로고 | |||
전체 6 페이지수
SANGDEST
MICROELECTRONICS
8TQ080 /S
8TQ100 /S
Technical Data
Data Sheet N0639, Rev. -
Applications:
8TQ080/S/ 8TQ100/S
SCHOTTKY RECTIFIER
Green Products
• Switching power supply
• Redundant power subsystems
• Converters
• Free-Wheeling diodes
• Reverse battery protection
Features:
• 150℃ TJ operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
Mechanical Dimensions: In mm / Inches
Case styles
8TQ…
8TQ…S
TO-220AC
D2PAK
Symbol
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Dimensions in
millimeters
Min. Typical Max.
4.55 4.70 4.85
1.17 1.27 1.37
2.59 2.69 2.89
0.71 0.81 0.96
1.27
0.36 0.38 0.61
14.64
14.94
15.24
8.55 8.07 8.85
10.01
10.16
10.31
9.98 10.18 10.38
5.08
6.04 6.24 6.44
13.00
13.86
14.08
3.80
3.74 3.84 4.04
2.54 2.74 2.94
5°
4°
4°
TO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
8TQ080 /S
8TQ100 /S
Technical Data
Data Sheet N0639, Rev. -
Electrical Characteristics:
Green Products
Characteristics
Max. Forward Voltage Drop
*
Max. Reverse Current at DC
condition
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Typical Series Inductance
LS
Max. Voltage Rate of
dv/dt
Change(Rated VR)
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Condition
@ 8A, Pulse, TJ = 25 °C
@ 8A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.75
0.58
1.0
7
500
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Typical Thermal
Resistance,case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
-
-
DC operation
Specification
-55 to +150
-55 to +150
2.0
Units
°C
°C
°C/W
Rθcs Mounting surface,smooth and
greased
0.50
°C/W
wt -
2g
TO-220AC,D2PAK(Suffix“s”for D2PAK; “MBRB”for D2PAK)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 8TQ080.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
8TQ080 | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
8TQ080 | Schottky Rectifier ( Diode ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |