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부품번호 | MRF9085SR3 기능 |
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기능 | RF POWER MOSFETs | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9085
MRF9085R3
MRF9085S
MRF9085SR3
MRF9085LS
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9085)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9085S, MRF9085LS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085
MRF9085S/MRF9085LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–181
VGG B1 B2
+
+
C7 C8 C9
L1
B3 VDD
+
+++
C16 C17 C18 C19
L2
RF
INPUT Z1
Z2 Z3 Z4 Z5 Z6
C1
C4 C3
C6
Z7 Z8 Z9
Z10
C5
C11 RF
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 OUTPUT
C10
DUT
C15
C12 C13 C14
B1, B2, B3
C1, C9, C15, C16
C3
C4, C13
C5, C6, C12
C7, C17, C18, C19
C8
C10, C11
C14
L1
L2
N1, N2
WB1, WB2
Z1
Z2
Z3
Z4
Z5
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors, B Case , ATC
5.6 pF Chip Capacitor, B Case, ATC
0.8 – 8.0 Variable Capacitors, Gigatrim
10 pF Chip Capacitors, B Case, ATC
10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet
20 K pF Chip Capacitor, B Case, ATC
16 pF Chip Capacitors, B Case, ATC
0.6 – 4.5 Variable Capacitor, Gigatrim
7.15 nH Inductor, Coilcraft
18.5 nH Inductor, Coilcraft
N–Type Panel Mount, Stripline, M/A–Com
5 Mil BeCu Shim (0.225 x 0.525)
0.219″ x 0.080″ Microstrip
0.150″ x 0.080″ Microstrip
0.851″ x 0.080″ Microstrip
0.125″ x 0.220″ Microstrip
0.123″ x 0.220″ Microstrip
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
PCB
0.076″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
0.220″ x 0.630″ x 0.200″ Taper
0.240″ x 0.630″ Microstrip
0.060″ x 0.630″ Microstrip
0.067″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.630″ x 0.220″ x 0.200″ Taper
0.200″ x 0.220″ Microstrip
0.055″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.226″ x 0.220″ Microstrip
0.868″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.223″ x 0.080″ Microstrip
Etched Circuit Board, Glass, Teflon®
εr = 2.55, 30 Mils
Figure 1. 865–895 MHz Broadband Test Circuit Schematic
C7
VGG
C1
B1
C8
B2
C9
L1
C3
C4
B3 VDD
C17 C19
C6 C11
C16
L2
C12
C18
C15
C5 C10
C13
C14
MRF9085
Figure 2. 865–895 MHz Broadband Test Circuit Component Layout
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–184
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ MRF9085SR3.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MRF9085SR3 | RF POWER MOSFETs | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |