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부품번호 | IPS60R1K0CE 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
IPS60R1K0CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1000
mΩ
Id. 6.8 A
Qg.typ
13
nC
ID,pulse
12
A
Eoss@400V
1.3
µJ
Type/OrderingCode
IPS60R1K0CE
Package
PG-TO 251
Marking
60S1K0CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R1K0CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.86 1.00
2.22 -
16 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.13mA
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
280 -
21 -
14 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 57 - pF ID=constant,VGS=0V,VDS=0...480V
-
10 -
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
-
8-
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
-
60 -
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
-
13 -
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
Min.
-
-
-
-
Values
Typ. Max.
1.5 -
6.5 -
13 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=1.9A,VGS=0to10V
nC VDD=480V,ID=1.9A,VGS=0to10V
nC VDD=480V,ID=1.9A,VGS=0to10V
V VDD=480V,ID=1.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
4 Rev.2.0,2016-02-26
4페이지 600VCoolMOSªCEPowerTransistor
IPS60R1K0CE
Diagram5:Typ.outputcharacteristics
12
20 V
11 10 V
10
9 8V
8
7
7V
6
5
4 6V
3
2
1
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
5.5 V
5V
4.5 V
15
Diagram6:Typ.outputcharacteristics
8
20 V
7 10 V
8V
6
7V
5
4 6V
3 5.5 V
2 5V
1 4.5 V
0
20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
15
20
Diagram7:Typ.drain-sourceon-stateresistance
5.0
Diagram8:Drain-sourceon-stateresistance
2.00
4.5
4.0
3.5
5 V 5.5V 6 V 6.5 V 7 V
3.0
2.5
2.0
1.5
10 V
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
98%
typ
1.0
0123456789
ID[A]
0.20
-50 -25 0 25 50 75 100 125 150
Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
RDS(on)=f(Tj);ID=1.5A;VGS=10V
Final Data Sheet
7 Rev.2.0,2016-02-26
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IPS60R1K0CE | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |