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부품번호 | IPS60R460CE 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
IPS60R460CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
460
mΩ
Id. 13.1 A
Qg.typ
28
nC
ID,pulse
26
A
Eoss@400V
2.5
µJ
Type/OrderingCode
IPS60R460CE
Package
PG-TO 251
Marking
60S460CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-25
600VCoolMOSªCEPowerTransistor
IPS60R460CE
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Min.
-
-
Thermal resistance, junction - ambient
for SMD version
RthJA
-
Soldering temperature, wave & reflow
soldering allowed
Tsold
-
Values
Typ. Max.
- 1.22
- 62
35 45
- 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL1
Final Data Sheet
4 Rev.2.0,2016-02-25
4페이지 600VCoolMOSªCEPowerTransistor
IPS60R460CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
110
100
90
80
70
60
50
40
30
20
10
0
0
Ptot=f(TC)
25 50 75 100
TC[°C]
125
Diagram3:Max.transientthermalimpedance(NonFullPAK)
101
100
0.5
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
150 10-5
10-4
ZthJC=f(tP);parameter:D=tp/T
10-3
tp[s]
10-2
10-1
Diagram5:Safeoperatingarea(NonFullPAK)
102
1 µs
10 µs
101
100 µs
1 ms
100 DC
Diagram7:Safeoperatingarea(NonFullPAK)
102
1 µs
101 10 µs
100 µs
1 ms
100 DC
10-1
10-1
10-2
10-2
10-3
100
101
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
102
Final Data Sheet
10-3
103 100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
103
7 Rev.2.0,2016-02-25
7페이지 | |||
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다운로드 | [ IPS60R460CE.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IPS60R460CE | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |