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PDF 4NM50 Data sheet ( Hoja de datos )
| Número de pieza | 4NM50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4NM50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
4NM50
Preliminary
4.0A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM50 is a high voltage super junction MOSFET and is
designed to have better characteristics.
The UTC 4NM50 Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This super
junction MOSFET usually used at AC/DC power conversion, and
industrial power applications.
FEATURES
* RDS(ON) < 1.3Ω @ VGS = 10V, ID = 2.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM50L-TA3-T
4NM50G-TA3-T
4NM50L-TF3-T
4NM50G-TF3-T
4NM50L-TF1-T
4NM50G-TF1-T
4NM50L-TF2-T
4NM50G-TF2-T
4NM50L-TM3-T
4NM50G-TM3-T
4NM50L-TN3-R
4NM50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
123
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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4NM50
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4NM50.PDF ] | |
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