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Datasheet SP8J3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SP8J3 | 4V Drive Pch+Pch MOS FET Transistors
4V Drive Pch+Pch MOS FET
SP8J3
SP8J3
zStructure Silicon P-channel MOS FET
zFeatures 1) Low On-resistance. (100mΩ at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. 4) Low voltage drive. (4V)
zApplications Power switching, DC-DC converter
zExternal dimensions (Unit : |  ROHM Semiconductor | data |
SP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SP80001 | 800MHz Low-loss SAW Filter 53MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute
800MHz Low-loss SAW Filter 53MHz Bandwidth
Part Number: SP80001
www.sipatsaw.com
SIPAT Co., Ltd.
Specifications
Parameter Center Frequency
Insertion Loss 1 dB Bandwidth 3 dB Bandwidth 35 dB Bandwidth Pass  SIPAT  | ||
| 2 | SP8005 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8005
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.5 @ VGS=4.5V 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON).  SamHop Microelectronics | ||
| 3 | SP8006 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8006
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON SamHop Microelectronics | ||
| 4 | SP8007 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). SamHop Microelectronics | ||
| 5 | SP8008 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8008
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mo SamHop Microelectronics | ||
| 6 | SP8009 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P SamHop Microelectronics | ||
| 7 | SP8009E | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009E
Ver 1.5
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.0 @ VGS=10V 6.5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. E SamHop Microelectronics |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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