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Data Sheet

24 GHz VCO and PGA

with 2-Channel PA Output

ADF5901

FEATURES

24 GHz to 24.25 GHz voltage controlled oscillator (VCO)

2-channel 24 GHz power amplifier (PA) with 8 dBm output

Single-ended outputs

2-channel muxed outputs with mute function

Programmable output power

N divider output (frequency discriminator)

24 GHz local oscillator (LO) output buffer

250 MHz signal bandwidth

Power control detector

Auxiliary 8-bit ADC

±5°C temperature sensor

4-wire serial peripheral interface (SPI)

Electrostatic discharge (ESD) performance

Human body model (HBM): 2000 V

Charged device model (CDM): 250 V

Qualified for automotive applications

APPLICATIONS

Industrial sensors

Precision instrumentation

Tank level sensors

Smart sensors

Door opening

Energy saving

Commercial sensors: object detection and tracking

Cars, boats, aircraft, and UAVs (drones): collision avoidance

Intelligent transportation systems: intelligent traffic

monitoring and control

Surveillance and security

GENERAL DESCRIPTION

The ADF5901 is a 24 GHz Tx monolithic microwave integrated

circuit (MMIC) with an on-chip, 24 GHz VCO with PGA and

dual Tx channels for radar systems. The on-chip, 24 GHz VCO

generates the 24 GHz signal for the two Tx channels and the LO

output. Each Tx channel contains a power control circuit. There

is also an on-chip temperature sensor.

Automotive radars

Industrial radars

Microwave radar sensors

Control of all the on-chip registers is through a simple 4-wire

interface.

The ADF5901 comes in a compact 32-lead, 5 mm × 5 mm

LFCSP package.

FUNCTIONAL BLOCK DIAGRAM

VREG

C1 C2

TX_AHI RF_AHI AHI

DVDD VCO_AHI

RSET

REFIN

MUXOUT

REGULATOR

R-DIVIDER

VCO

CAL

ADF5901

REFERENCE

ADC

TXOUT1

CLK

DATA

LE

DOUT

CE

N-DIVIDER

32-BIT

DATA

REGISTER

÷2

ADC

÷2

TEMPERATURE

SENSOR

ADC

VTUNE

AUX

AUX

Figure 1.

LOOUT

GND

TXOUT2

ATEST

Rev. A

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Technical Support

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Data Sheet

ADF5901

SPECIFICATIONS

AHI = TX_AHI = RF_AHI = VCO_AHI = DVDD = 3.3 V ± 5%, AGND = 0 V, dBm referred to 50 Ω, TA = TMAX to TMIN, unless otherwise

noted. Operating temperature range is −40°C to +105°C.

Table 1.

Parameter

OPERATING CONDITIONS

RF Frequency Range

VCO CHARACTERISITICS

VTUNE

VTUNE Impedance

VCO Phase Noise Performance

At 100 kHz Offset

At 1 MHz Offset

At 10 MHz Offset

Amplitude Noise

Static Pulling fVCO Change vs. Load

Dynamic Pulling Tx On/Off Switch Change

Dynamic Pulling Tx to Tx Switch Change

Pushing fVCO Change vs. AHI Change

Spurious Level Harmonics

Spurious Level Nonharmonics

POWER SUPPLIES

AHI, TX_AHI, RF_AHI, VCO_AHI, DVDD

Total Current, ITOTAL1

Software Power-Down Mode

Hardware Power-Down Mode

Tx OUTPUT

Output Power

Output Impedance

On/Off Isolation

Tx to Tx Isolation

Power-Up/Power-Down Time

LO OUTPUT

Output Power

Output Impedance

On/Off Isolation

AUX PIN OUTPUT

Output Power

Output Frequency

Divide by 2 Output

Divide by 4 Output

Output Impedance

On/Off Isolation

AUX to LO Isolation

TEMPERATURE SENSOR

Analog Accuracy

Digital Accuracy

Sensitivity

Min Typ Max Unit Test Conditions/Comments

24 24.25 GHz

1 2.8 V

100 kΩ

−88

−108

−128

−150

±2

±10

±5

±5

−30

<−70

dBc/Hz

dBc/Hz

dBc/Hz

dBc/Hz

MHz

MHz

MHz

MHz/V

dBc

dBc

At 1 MHz offset

Open-loop into 2:1 voltage standing wave ratio

(VSWR) load

Open-loop

Open-loop

Open-loop

3.135 3.3 3.465 V

170 mA

500 µA

200 µA

2 8 10 dBm

50 Ω

30 dB Single Tx output switched on/off

25 dB

200 ns

−7 −1 +5 dBm

50 Ω

30 dB

−9 −5 0

dBm Single-ended

12 12.125 GHz

6 6.0625 GHz

200 Ω Differential

30 dB

30 dB

±5 °C Following one-point calibration

±5 °C Following one-point calibration

6.4 mV/°C

Rev. A | Page 3 of 26

ADF5901

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

AHI to GND

AHI to TX_AHI

AHI to RF_AHI

AHI to VCO_AHI

AHI to DVDD

VTUNE to GND

Digital Input/Output Voltage to GND

Operating Temperature Range

Storage Temperature Range

Maximum Junction Temperature

θJA Thermal Impedance1 (Paddle

Soldered)

Reflow Soldering

Peak Temperature

Time at Peak Temperature

Transistor Count

CMOS

Bipolar

ESD

Charged Device Model

Human Body Model

Rating

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to +0.3 V

−0.3 V to +0.3 V

−0.3 V to +0.3 V

−0.3 V to +3.6 V

−0.3 V to DVDD + 0.3 V

−40°C to +105°C

−65°C to +150°C

150°C

40.83 °C/W

260°C

40 sec

177,381

2315

250 V

2000 V

1 Two signal planes (that is, on top and bottom surfaces of the board), two

buried planes, and nine vias.

Data Sheet

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

ESD CAUTION

Rev. A | Page 6 of 26

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