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PDF WTPA16A60SW Data sheet ( Hoja de datos )
| Número de pieza | WTPA16A60SW | |
| Descripción | Bi-Directional Triode Thyristor | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WTPA16A60SW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=16A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A
■ High Commutation dV/dt.
General Description
General purpose swithhing and phase control applications. These
devices are intended to be interfaced directly to micro-controllers,
logic integrated circuits and other low power gate trigger circuits
such as fan speed and temperature modulation control, lighting
control and static switching relay.
The -W series are specially recommended for use on inductive loads,
thanks to their high commutation performances. By using an internal
ceramic pad, the WTPA series provides voltage insulated tab (rated
at 2500V RMS). complying with UL standards (file ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VPRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58℃)
600 V
16 A
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
160/168
A
I2t Circuit Fusing Considerations (tp= 10 ms)
144 A2s
PGM Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5W
PG(AV)
Average Gate Power — Forward, (Over any 20ms period)
1W
dI/dt
IFGM
Critical rate of rise of on-state current
ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs
TJ=125℃
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
50 A/μs
4A
VRGM
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
10 V
TJ, Junction Temperature
-40~125
℃
Tstg Storage Temperature
-40~150
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.6
- - 60
Units
℃/W
℃/W
Rev. A Sep.2010
Copyright @ WinSemi Microelectronics Co., Ltd., All rights reserved.
T03-3
1 page  
TO-220ISO Package Dimension
WTPA16A60SW
Unit: mm
Steady, keep you advance
5/5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WTPA16A60SW.PDF ] | |
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