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PDF MSD602-RT1 Data sheet ( Hoja de datos )
| Número de pieza | MSD602-RT1 | |
| Descripción | NPN General Purpose Amplifier Transistor Surface Mount | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSD602-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
Value
1
EMITTER
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
V(BR)CEO
V(BR)EBO
IC
50
7.0
500
Vdc
Vdc
mAdc
Collector Current — Peak
IC(P)
1.0 Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD 200 mW
TJ 150 °C
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 150 mAdc)
(VCE = 10 Vdc, IC = 500 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE1
hFE2
Collector–Emitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc)
VCE(sat)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Cob
DEVICE MARKING
Min
50
60
7.0
—
120
40
—
—
2
1
3
CASE 318D–03, STYLE 1
SC–59
Max Unit
— Vdc
— Vdc
— Vdc
0.1 µAdc
—
240
—
0.6 Vdc
15 pF
Marking Symbol
WRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2–726
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MSD602-RT1.PDF ] | |
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