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Datasheet P600S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P600S | Plastic Silicon Rectifiers P600A-P600S
Plastic Silicon Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 6.0 A
Features
Low cost Diffused junction
Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol j and similar solvents The plastic material carries U/L recognition 94V-0 |  LGE | rectifier |
| 2 | P600S | Silicon Rectifiers P 600 A … P 600 S Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiz |  Diotec Semiconductor | rectifier |
P60 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P6002A | solid state crowbar devices Teccor Electronics data | | |
| 2 | P6002ACMC | solid state crowbar devices Teccor Electronics data | | |
| 3 | P6002AD | solid state crowbar devices Teccor Electronics data | | |
| 4 | P6002CA | solid state crowbar devices Teccor Electronics data | | |
| 5 | P6002OAG | N & P-Channel Enhancement Mode MOSFET P6002OAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.5V
-20V
115mΩ @VGS = -4.5V
ID 3.4A -2.5A
Channel N P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
 UNIKC mosfet | | |
| 6 | P6002Z | solid state crowbar devices Teccor Electronics data | | |
| 7 | P6003QEA | P&N-Channel Enhancement Mode MOSFET P6003QEA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 24mΩ @VGS = 10V
-30V
60mΩ @VGS = -10V
ID 20A -12A
Channel N P
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N UNIKC mosfet | |
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