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PDF BSS63 Data sheet ( Hoja de datos )
| Número de pieza | BSS63 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
-110
-100
-6
-100
100
200
150
-65ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
BSS63
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
T6
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Base-Emitter Saturation Voltage
VBE(sat)
Collector-Emitter Saturation Voltage
VCE(sat)
Transition Frequency
Collector Output Capacitance
fT
Cob
TEST CONDITION
IC=-10mA, IB=0
IC=-10ỌA, IE=0
IE=-10ỌA, IC=0
VCB=-90V, IE=0
VCB=-90V, IE=0, Ta=150ᴱ
VEB=-5V, IC=0
VCE=-1V, IC=-10mA
VCE=-1V, IC=-25mA
IC=-25mA, IB=-2.5mA
IC=-25mA, IB=-2.5mA
IC=-75mA, IB=-7.5mA
IC=-25mA, VCE=-5V, f=100MHz
VCB=-10V, IE=0, f=1MHz
1998. 6. 15
Revision No : 1
MIN.
-100
-110
-6
-
-
-
30
30
-
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
3
MAX.
-
-
-
-100
-50
-200
-
-
-0.9
-0.25
-0.9
-
-
UNIT
V
V
V
nA
ỌA
nA
V
V
MHz
pF
1/1
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