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PDF AOP604 Data sheet ( Hoja de datos )
| Número de pieza | AOP604 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | ETC | |
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March 2003
AOP604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP604 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses.
Features
n-channel p-channel
VDS (V) = 30V
ID = 7.5A
RDS(ON)
-30V
-6.6A
< 28mΩ
< 35mΩ (VGS = 10V)
< 43mΩ
Schottky
< 58mΩ (VGS = 4.5V)
VDS=30V, IF=3A, VF<0.5V@1A
PDIP-8
S1/A
G1
1
2
8
7
D1/K N-ch
D1/K
S2
G2
3
4
6
5
D2
D2
P-ch
D2 D1
K
G2 G1
A
S2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AOP604
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
25
20
6V
5V
4.5V
4V
20
16 VDS=5V
12
15
3.5V
8
10
125°C
5
VGS=3V
4
25°C
00
012345
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts)
Fig 1: On-Region Characteristics
VGS (Volts)
Figure 2: Transfer Characteristics
60
50
40 VGS=4.5V
30
20 VGS=10V
10
0
5 10 15 20
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.7
1.6
ID=7.5A
VGS=10V
1.5
1.4 VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
0
50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
60 ID=7.5A
50
40 125°C
30
25°C
20
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body diode characteristics
MOSFET+Schottky
1.0
Alpha & Omega Semiconductor, Ltd.
5 Page 
ALPHA & OMEGA
SEMICONDUCTOR, INC.
PDIP-8 (300) Tube Data
PDIP-8 Tube
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AOP604.PDF ] | |
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