(PDF) CZT2000 Datasheet - NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR

Número de pieza	CZT2000
Descripción	NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
Fabricantes	Central Semiconductor Corp
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No Preview Available ! CZT2000 NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: SOT-223 CASE The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ,Tstg ΘJA 200 200 10 600 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) UNITS V V V mA W oC oC/W SYMBOL ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE TEST CONDITIONS VCB=180V VBE=10V IC=1.0mA IC=20mA, IB=25µA IC=80mA, IB=40µA IC=160mA, IB=100µA VCE=5.0V, IC=160mA VCE=5.0V, IC=100µA VCE=5.0V, IC=10mA VCE=5.0V, IC=160mA MIN 200 3,000 3,000 3,000 MAX 500 100 0.9 1.1 1.2 2.0 UNITS nA nA V V V V V 298 1 page

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PDF CZT2000 Data sheet ( Hoja de datos )