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3EZ170 데이터시트 PDF




TRSYS에서 제조한 전자 부품 3EZ170은 전자 산업 및 응용 분야에서
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부품번호 3EZ170 기능
기능 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
제조업체 TRSYS
로고 TRSYS 로고


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3EZ170 데이터시트, 핀배열, 회로
3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Excellent clamping capability
l Typical ID less than 1 A above 11V
l High temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-15
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
SYMBOL
PD
IFSM
TJ,TSTG
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
VALUE
3
24
15
UNITS
Watts
mW/
Amps
-55 to +150




3EZ170 pdf, 반도체, 판매, 대치품
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ ( TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
V = VZ TJ
VZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of Figure
3 be exceeded.
RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
TEMPERATURE COEFFICIENT REAGES
(90% of the Units are int he Ranges Indicated)
Fig. 5-UNITS TO 12 VOLTS
Fig. 6-UNITS 10 TO 200 VOLTS
Fig. 7-VZ = 3.9 THRU 10 VOLTS
Fig. 8- VZ = 12 THRU 82 VOLTS

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