Datasheet.kr   

LZ2336 데이터시트 PDF




Sharp Electrionic Components에서 제조한 전자 부품 LZ2336은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 LZ2336 자료 제공

부품번호 LZ2336 기능
기능 Two-power supply (+5 V and +12 V) operation 1 / 3 type B/W CCD Area Sensor for EIA
제조업체 Sharp Electrionic Components
로고 Sharp Electrionic Components 로고


LZ2336 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 8 페이지수

미리보기를 사용할 수 없습니다

LZ2336 데이터시트, 핀배열, 회로
LZ2336
LZ2336
Two-power supply (+5 V and +12 V) operation
1 / 3 type B/W CCD Area Sensor for EIA
DESCRIPTION
PIN CONNECTIONS
U2336 is a 1 /3-type (6.0 mm) solid-state image
sensor that consists of PN phote-diodes and
16-PIN SDIP
CCDS (charge-coupled devices) driven by only
positive voltages. Having approximately 190000
pixels (horizontal 384 X vertical 492), the sensor
d RS
provides a stable B/W image.
FEATURES
q Number of pixels : 362 (H) X 492 (V)
Pixel pitch : 13.6 Mm (H) X 7.5 Am (V)
RD
,——_— ——— ——— — ,
GND
,
1
0s
Number of optical black pixels
OD
: Horizontal; front 2 and rear 20
q Low fixed pattern noise and lag
d H2B
I
.—. ——— ——— ——— J
q No sticking and no image distortion
$ H2
q Blooming suppression structure
q Built-in output amplifier
dHIB
q Variable electronic shutter (1 /60 to 1/1 O 000S)
q Compatible with EIA standard
q Package : 16-pin SDIPICERDIP](WDIPO1 6-N-0500B)
TOP VIEW
GND
0s
OFD
dTG
OD RD d ,S
dH1 +H2
dHIB dH2B
“In tie abwnce of conf!mtlon by device swIflcation sh=b, WARP Wes no reswsib(llv b any defeck hat cccur In quipmsnt us!ng any of SHARP’s &vIces, zhom In catalcgs,
1 4 9dats bwks, etc hnhct WARP (n waler to obb[n ti latest @mIon of tie dev(ce swdlcabon shwh bsti us!ng any SHARPs device
I




LZ2336 pdf, 반도체, 판매, 대치품
LZ2336
ELECTRICAL CHARACTERISTICS (Drive method : Field Accumulation)
(Ta=25°C, Operating conditions : typical values for the recommended operating conditions, Color
temperature of light source : 3200 K / IR cut-off filter (CM-500, 1 mmt))
PARAMETER
Photo response non-uniformity
Saturation signal
Dark output voltage
Dark signal non-uniformity
Sensitivity
Smear ratio
Image lag
Blooming suppression ratio
Output transistor drain current
Output impedance
SYMBOL
PRNU
Vsat
Vdark
DSNU
R
SMR
Al
ABL
iOD
Ro
MIN.
500
160
1000
TYP.
5.0
1.5
220
– 85
2.5
400
MAX.
15
15.0
5.0
– 76
1.0
5.0
UNIT
‘?/0
mV
mV
mV
mV
dB
0/0
mA
Q
NOTE
2
3
1, 4
1, 5
6
7
8
9
. Tt?e standard output voltage is defined as 150 mV by the
average output voltage under uniform illumination.
q The standard exposure level is defined when the average
output voltage is 150 mV under uniform illumination.
NOTES :
1. Ta : +60CC
2. The image area is divided into 10x 10 segments. The seg-
ment’s voltage is the average output voltage of all the
pixels within the segment. PRNU is defined by (Vmax –
Vmin)/Vo, where Vmax and Vmin are the maximum and
the minimum values of each segment’s voltage respec-
tively, when the average output voltage Vo is 150mV.
3. The image area is divided into 10x 10 segments.
The saturation signal is defined as the minimum of each
segment’s voltage which is the average output voltage of
all the pixels with!n the segment, when the exposure level
is set as 10 times, compared to standard level,
4. The average output voltage under a non-exposure condition.
5. The image ~ea is d!vlded into 10x 10 segments. DSNU is
defined by (Vdmex – Vdmin) under the non-exposure con-
dition where Vdmax and Vdmin are the maximum and the
minimum values of each segment’s voltage, respectively,
that is the average output voltage over all pixels in the
segment.
6 The average output voltage when a 10W Iux I ight source
attached with a 90”A reflector is imaged by a lens of F4,
f50 mm.
7 The sensor is adjusted to poslt(on a V/l O square at the
center of image area where V is the vertical length of the
image area, SMR is defined by the ratio of the output
voltage detected during the vertical blanking period to the
maximum of the pixel voltage in the V/l O square.
8 The sensor is exposed at the exposure level correspond-
ing to the standard condition preceding non-exposure con-
dition. Al is defined by the ratio between the output volt-
age measured at the 1st field during the non-exposure
period and the standard output voltage.
9 The sensor is adjusted to position a V/l O square at the
center of image area. ABL is the ratio between the ex-
posure at the standard condition and the exposure at a
point where a blooming is observed.
152

4페이지










LZ2336 전자부품, 판매, 대치품
(ODD FIELD)
READOUT
4V4
dTG
(EVEN FIELD)
HD
d VI
d V2
II
U2336
n
r--
155

7페이지


구       성 총 8 페이지수
다운로드[ LZ2336.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
LZ2336

Two-power supply (+5 V and +12 V) operation 1 / 3 type B/W CCD Area Sensor for EIA

Sharp Electrionic Components
Sharp Electrionic Components

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵