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PDF ITF87008DQT Data sheet ( Hoja de datos )
| Número de pieza | ITF87008DQT | |
| Descripción | 7.0A/ 20V/ 0.023 Ohm/ Dual N-Channel/ 2.5V Specified Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
ITF87008DQT
March 2000 File Number 4814.2
7.0A, 20V, 0.023 Ohm, Dual N-Channel,
2.5V Specified Power MOSFET
Packaging
TSSOP-8
1
23 4
5
Symbol
DRAIN1(1)
SOURCE1(2)
SOURCE1(3)
GATE1(4)
(8) DRAIN2
(7) SOURCE2
(6) SOURCE2
(5) GATE2
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.023Ω, VGS = 4.5V
- rDS(ON) = 0.024Ω, VGS = 4.0V
- rDS(ON) = 0.029Ω, VGS = 2.5V
• 2.5 Volt Gate Drive Capability
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87008DQT
TSSOP-8
87008
NOTE: When ordering, use the entire part number. ITF87008DQT2
is available only in tape and reel.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
ITF87008DQT
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
(TA
(TA
(TA
=
=
=
221550oo0CCoC,, VV, VGGGSSS===44..450.VV0V)) )((NN(Noottoeete22))3..)
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ID
ID
ID
Continuous (TA = 100oC, VGS = 2.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 62.5oC/W measured using FR-4 board with 0.50 in2 (322.6 mm2 ) copper pad at 1 second.
3. 230oC/W measured using FR-4 board with 0.0022 in2 (1.44 mm2) copper pad at 1000 seconds.
20
20
±12
7.0
7.0
2.0
2.0
Figure 4
2.0
16
-55 to 150
300
260
V
V
V
A
A
A
A
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER© is a Copyright of Analogy Inc. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
ITF87008DQT
Typical Performance Curves (Continued)
1.10
ID = 250µA
1.05
2000
1000
1.00
CISS = CGS + CGD
COSS ≅ CDS + CGD
0.95
0.90
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
VGS = 0V, f = 1MHz
100
0.1
1.0
CRSS = CGD
10
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
VDD = 10V
4
3
2
WAVEFORMS IN
1 DESCENDING ORDER:
ID = 7A
ID = 1A
0
0 3 6 9 12
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
600
VGS = 2.5V, VDD = 10V, ID = 2A
500
tr
400
tf
300
td(OFF)
200
100 td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
400
VGS = 4.5V, VDD = 10V, ID = 7A
td(OFF)
300
tf
200
tr
100
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
5
5 Page 
SPICE Thermal Model
REV 26 January 2000
ITF87008DQT
Copper Area = 0.50 in2
CTHERM1 th 8 6.7e-4
CTHERM2 8 7 2.2e-3
CTHERM3 7 6 5.0e-3
CTHERM4 6 5 8.6e-3
CTHERM5 5 4 2.2e-2
CTHERM6 4 3 0.08
CTHERM7 3 2 0.32
CTHERM8 2 tl 1.9
RTHERM1 th 8 0.267
RTHERM2 8 7 0.893
RTHERM3 7 6 2.23
RTHERM4 6 5 14.28
RTHERM5 5 4 21.42
RTHERM6 4 3 23.0
RTHERM7 3 2 27.0
RTHERM8 2 tl 29.0
SABER Thermal Model
Copper Area = 0.50 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 6.7e-4
ctherm.ctherm2 8 7 = 2.2e-3
ctherm.ctherm3 7 6 = 5.0e-3
ctherm.ctherm4 6 5 = 8.6e-3
ctherm.ctherm5 5 4 = 2.2e-2
ctherm.ctherm6 4 3 = 0.08
ctherm.ctherm7 3 2 = 0.32
ctherm.ctherm8 2 tl = 1.9
rtherm.rtherm1 th 8 = 0.267
rtherm.rtherm2 8 7 = 0.893
rtherm.rtherm3 7 6 = 2.23
rtherm.rtherm4 6 5 = 14.28
rtherm.rtherm5 5 4 = 21.42
rtherm.rtherm6 4 3 = 23.0
rtherm.rtherm7 3 2 = 27.0
rtherm.rtherm8 2 tl = 29.0
}
ITF87008DQT
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
tl CASE
COMPONENT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.02 in2
0.07
0.15
0.68
22.8
39.5
56
TABLE 1. THERMAL MODELS
0.14 in2
0.26 in2
0.05 0.06
0.24 0.25
1.3 1.6
21 21
30 32
45 38
0.38 in2
0.07
0.28
2.0
25
30
34
0.50 in2
0.08
0.32
1.9
23
27
29
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet ITF87008DQT.PDF ] | |
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