IRF530 가격 및 재고 조회

IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW GATE CHARGE s HIGH CURRENT CAPABILITY 3 s 175 oC OPERATING

PD - 90585 REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE) Product Summary Part Number IRF034 IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transist

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES HERMETICALLY SEALED TO 3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52

PD - 90584 REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transist

LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF044SMD N CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(con