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PDF TN2535 Data sheet ( Hoja de datos )
| Número de pieza | TN2535 | |
| Descripción | N-Channel Enhancement-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex Inc | |
| Logotipo |  |
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TN2535
Low Threshold
New Product
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
RDS(ON)
(max)
VGS(th)
(max)
ID(ON)
(min)
350V
10Ω 2.0V
1.0A
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
TO-243AA*
TN2535N8
Features
❏ Low threshold
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Product marking for TO-243AA
TN5S❋
Where ❋ = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
D
G
D
S
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex prod1ucts, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TN2535.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TN2535 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| TN2535 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| TN2535 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
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