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RA20H8087M 데이터시트 PDF




Mitsubishi Electric Semiconductor에서 제조한 전자 부품 RA20H8087M은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 RA20H8087M 기능
기능 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
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RA20H8087M 데이터시트, 핀배열, 회로
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8087M
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 806- to 870-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA20H8087M-E01
RA20H8087M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 20H8087M
MITSUBISHI ELECTRIC
1/10
25 April 2003




RA20H8087M pdf, 반도체, 판매, 대치품
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=764MHz,
V GG=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD
30
8
P out
6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=806MHz,
V G G=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD
30
P out
8
6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=825MHz,
V GG=5V,
60 Pin=50mW
16
14
12
50
IDD
10
P out
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=851MHz,
V GG =5V,
60 Pin=50mW
16
14
12
50
IDD
40
10
Pout 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=870MHz,
VGG=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD Pout 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=764MHz,
12
50 VDD=12.5V,
P i n= 5 0 m W
40
10
IDD
P out
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=806MHz,
50 VDD=12.5V,
P i n=50mW
40
12
IDD 10
P out
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
RA 20H8087M
MITSUBISHI ELECTRIC
4/10
25 April 2003

4페이지










RA20H8087M 전자부품, 판매, 대치품
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TEST BLOCK DIAGRAM
Power
Meter
DUT
5
12
34
Spectrum
Analyzer
Signal
Pre- Directional
Attenuator
Attenuator
Generator
amplifier
Coupler
ZG=50
C1
C2
ZL=50
Directional
Power
Coupler
Attenuator
Meter
C1, C2: 4700pF, 22uF in parallel
-+
DC Power
Supply VGG
+-
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
RA 20H8087M
MITSUBISHI ELECTRIC
7/10
4
5
25 April 2003

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