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부품번호 | RA20H8087M 기능 |
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기능 | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
전체 10 페이지수
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8087M
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 806- to 870-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA20H8087M-E01
RA20H8087M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 20H8087M
MITSUBISHI ELECTRIC
1/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=764MHz,
V GG=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD
30
8
P out
6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=806MHz,
V G G=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD
30
P out
8
6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=825MHz,
V GG=5V,
60 Pin=50mW
16
14
12
50
IDD
10
P out
40 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=851MHz,
V GG =5V,
60 Pin=50mW
16
14
12
50
IDD
40
10
Pout 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
70 f=870MHz,
VGG=5V,
60 Pin=50mW
16
14
12
50 10
40 IDD Pout 8
30 6
20 4
10 2
00
2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=764MHz,
12
50 VDD=12.5V,
P i n= 5 0 m W
40
10
IDD
P out
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=806MHz,
50 VDD=12.5V,
P i n=50mW
40
12
IDD 10
P out
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
RA 20H8087M
MITSUBISHI ELECTRIC
4/10
25 April 2003
4페이지 ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TEST BLOCK DIAGRAM
Power
Meter
DUT
5
12
34
Spectrum
Analyzer
Signal
Pre- Directional
Attenuator
Attenuator
Generator
amplifier
Coupler
ZG=50Ω
C1
C2
ZL=50Ω
Directional
Power
Coupler
Attenuator
Meter
C1, C2: 4700pF, 22uF in parallel
-+
DC Power
Supply VGG
+-
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
RA 20H8087M
MITSUBISHI ELECTRIC
7/10
4
5
25 April 2003
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ RA20H8087M.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RA20H8087M | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | Mitsubishi Electric Semiconductor |
RA20H8087M-01 | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | Mitsubishi Electric Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |