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PDF PZTA65 Data sheet ( Hoja de datos )
| Número de pieza | PZTA65 | |
| Descripción | PNP Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Discrete POWER & Signal
Technologies
MPSA65
MMBTA65
PZTA65
C
BE
TO-92
C
SOT-23
Mark: 2W
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
30
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
30
10
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
MPSA65
625
5.0
83.3
200
Max
*MMBTA65
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA65
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A65, Rev A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PZTA65.PDF ] | |
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