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PDF BTA212X Data sheet ( Hoja de datos )
| Número de pieza | BTA212X | |
| Descripción | Three quadrant triacs guaranteed commutation | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BTA212X series D, E and F
Three quadrant triacs
guaranteed commutation
Product specification
June 2003
1 page  
NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
20 Ptot / W
15
10
5
1
Ths(max) / C 45
= 180
120
90
60
30
65
85
105
0 125
0 5 10 15
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
dIT/dt limit
100
IT ITSM
T time
10
10us
100us
1ms
T/s
Tj initial = 25 C max
10ms
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
100 ITSM / A
80
60
IT ITSM
T time
Tj initial = 25 C max
40
20
01 10 100 1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
15
10
BT138X
56 C
5
0-50 0
50 100 150
Ths / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
25 IT(RMS) / A
20
15
10
5
0
0.01
0.1 1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
VGT(Tj)
1.6 VGT(25 C)
1.4
1.2
1
0.8
0.6
0.4-50
0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
June 2003
4
Rev 3.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BTA212X.PDF ] | |
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