|
|
PDF PHN603S Data sheet ( Hoja de datos )
| Número de pieza | PHN603S | |
| Descripción | TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHN603S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
FEATURES
• Schottky diode across each
MOSFET
• Low on-state resistance
• Fast switching
• Logic level compatible
• Surface mount package
SYMBOL
D4
G6
D1
G5
D2
G1
S1
G2
S2
G4
D3
G3
S3
QUICK REFERENCE DATA
VDS = 25 V
ID = 5.5 A
RDS(ON) ≤ 35 mΩ (VGS = 10 V)
RDS(ON) ≤ 55 mΩ (VGS = 4.5 V)
GENERAL DESCRIPTION
Six n-channel, enhancement
mode, logic level, field-effect
power transistors and six schottky
diodes configured as three
half-bridges. This device has low
on-state resistance and fast
switching. The intended
application is in computer disk and
tape drives as a three phase
brushless d.c. motor driver.
The PHN603S is supplied in the
SOT137-1 (SO24) surface
mounting package.
PINNING
PIN
DESCRIPTION
1,4 drain 1
2 source 1
3 gate 1
5,8 drain 2
6 source 2
7 gate 2
9,12 drain 3
10 source 3
11 gate 3
13 gate 4
14-16, 18-20, 22-24 drain 4
17 gate 5
21 gate 6
SOT137-1 (SO24)
Top view
1
12
24
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDS
VDGR
VGS
ID
IDM
Ptot
Ptot
Tstg, Tj
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
Drain current per device (pulse
peak value)
Total power dissipation per device
Total power dissipation all devices
conducting
Storage & operating temperature
Tj = 25 ˚C to 150˚C
Tj ≤ 80 ˚C1
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
25
± 20
5.5
3.5
22
1.67
0.67
2.78
1.11
150
UNIT
V
V
V
V
A
A
A
W
W
W
W
˚C
1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
1
Rev 1.000
1 page  
Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
Drain current, ID (A)
100mA
Sub-Threshold Conduction
10mA
1mA
min
typ
100uA
10uA
VDS = VGS
Tj = 25 C
1uA
0
1234
Gate-source voltage, VGS (V)
5
Fig.13. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
PHN603S
1000
Ciss
Coss
100
0.1
Crss
1 10
Drain-Source Voltage, VDS (V)
100
Fig.14. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Gate-source voltage, VGS (V)
15
14 ID = 1A
13
12
Tj = 25 C
11 VDD = 20 V
10
9
8
7
6
5
4
3
2
1
0
0 5 10 15
Gate charge, QG (nC)
PHN603S
20 25
Fig.15. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
5
4.5 VGS = 0 V
4
3.5
150 C
3
Tj = 25 C
2.5
2
1.5
1
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Drain-Source Voltage, VSDS (V)
PHN603S
0.7 0.8
Fig.16. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
October 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PHN603S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHN603S | TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |