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PDF PHP20N06T Data sheet ( Hoja de datos )
| Número de pieza | PHP20N06T | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
Rev. 01 — 22 February 2001
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D 2-PAK).
2. Features
s Very low on-state resistance
s Fast switching.
3. Applications
s Switched mode power supplies
s DC to DC converters.
c
4. Pinningc information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = −55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 10 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
− 64 75 mΩ
− − 150 mΩ
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
ID = 25 A; VDD = 44 V;
VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6 mm from
package to centre of die
−
−
−
−
−
−
−
−
−
−
−
11 −
nC
3 − nC
6 − nC
320 483 pF
92 113 pF
64 90 pF
10 −
ns
50 −
ns
70 −
ns
40 −
ns
4.5 −
nH
from contact screw on
mounting base to centre of
die SOT78
−
3.5 −
nH
from upper edge of drain
mounting base to centre of
die SOT404
−
2.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
10. Soldering
handbook, full pagewidth
1.50
2.25 2.15
8.15 8.35
1.50
4.60
4.85
7.95
0.30
3.00
solder lands
solder resist
occupied area
solder paste
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404.
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
10.85
10.60
10.50
7.50
7.40
1.70
8.275
5.40
8.075
0.20
5.08
1.20
1.30
1.55
MSD057
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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