PDF PHP212 Data sheet ( Hoja de datos )

Número de pieza	PHP212
Descripción	Dual P-channel enhancement mode MOS transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET PHP212 Dual P-channel enhancement mode MOS transistor Product speciﬁcation Supersedes data of 1996 Oct 23 File under Discrete Semiconductors, SC13b 1997 Jun 18 1 page Philips Semiconductors Dual P-channel enhancement mode MOS transistor Product speciﬁcation PHP212 CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed. SYMBOL PARAMETER Per P-channel V(BR)DSS VGSth IDSS IGSS RDSon drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance Ciss Coss Crss QG QGS QGD td(on) tr ton td(off) tf toff input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-on switching time turn-off delay time fall time turn-off switching time Source-drain diode VSD source-drain diode forward voltage trr reverse recovery time CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = −10 µA VGS = VDS; ID = −1 mA VGS = 0; VDS = −24 V VGS = ±20 V; VDS = 0 VGS = −4.5 V; ID = −1 A VGS = −10 V; ID = −2 A VGS = 0; VDS = −24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz VGS = −10 V; VDD = −15 V; ID = −2 A VGS = −10 V; VDD = −15 V; ID = −2 A VGS = −10 V; VDD = −15 V; ID = −2 A VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; Rgen = 6 Ω; see Fig.4 −30 −1 − − − − − − − − − − − − − − − − −− − −2.8 − −100 − ±100 − 0.25 − 0.12 450 − 200 − 100 − 13 − 1− 4− 6− V V nA nA Ω Ω pF pF pF nC nC nC ns 4− ns 10 − ns 29 − ns 16 − ns 45 − ns VGD = 0; IS = −1.25 A IS = −1.25 A; di/dt = 100 A/µs − − −1.3 V − 75 − ns 1997 Jun 18 5 5 Page Philips Semiconductors Dual P-channel enhancement mode MOS transistor Product speciﬁcation PHP212 DEFINITIONS Data Sheet Status Objective speciﬁcation Preliminary speciﬁcation Product speciﬁcation This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the speciﬁcation. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 18 11 11 Page

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