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Número de pieza | PHP225 | |
Descripción | Dual P-channel enhancement mode MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PHP225 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
PHP225
Dual P-channel enhancement
mode MOS transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Product specification
PHP225
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
35
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per P-channel
V(BR)DSS
VGSth
IDSS
IGSS
IDon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
on-state drain current
RDSon
drain-source on-state resistance
yfs
Ciss
Coss
Crss
QG
QGS
QGD
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
ton turn-on time
toff turn-off time
Source-drain diode
VDS source drain diode forward
voltage
trr reverse recovery time
CONDITIONS
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −24 V
VGS = ±20 V; VDS = 0
VGS = −10 V; VDS = −1 V
VGS = −4.5 V; VDS = −5 V
VGS = −4.5 V; ID = −0.5 A
VGS = −10 V; ID = −1 A
VDS = −20 V; ID = −1 A
VGS = 0; VDS = −20 V; f = 1 MHz
VGS = 0; VDS = −20 V; f = 1 MHz
VGS = 0; VDS = −20 V; f = 1 MHz
VGS = −10 V; VDS = −15 V;
ID = −2.3 A
VGS = −10 V; VDS = −15 V;
ID = −2.3 A
VGS = −10 V; VDS = −15 V;
ID = −2.3 A
VGD = 0 to −10 V; VDD = −20 V;
ID = −1 A; RL = 20 Ω
VGS = −10 to 0 V; VDD = −20 V;
ID = −1 A; RL = 20 Ω
VGD = 0; IS = −1.25 A
IS = −1.25 A; di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
−30 − − V
−1 −
−2.8 V
− − −100 nA
− − ±100 nA
−2.3 − − A
−1 − − A
−
0.33 0.4
Ω
− 0.22 0.25 Ω
12−S
− 250 − pF
− 140 − pF
− 50 − pF
− 10 25 nC
− 1 − nC
− 3 − nC
− 20 80 ns
− 50 140 ns
− − −1.6 V
− 150 200 ns
1997 Jun 20
5
5 Page Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
NOTES
Product specification
PHP225
1997 Jun 20
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet PHP225.PDF ] |
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