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PDF PHP33NQ20T Data sheet ( Hoja de datos )
| Número de pieza | PHP33NQ20T | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Low thermal resistance
s Fast switching
s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching.
1.4 Quick reference data
s VDS ≤ 200 V
s RDSon ≤ 77 mΩ
s ID ≤ 32.7 A
s Qgd = 9.6 nC (typ).
2. Pinning information
Table 1: Discrete pinning
Pin Description
Simplified outline
1 gate
2 drain
[1] mb
3 source
mb mounting base;
connected to drain
Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
2
13
SOT404 (D2-PAK)
1 page  
Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 160 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 25 A; VDS = 100 V; VGS = 10 V;
Figure 11
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 13
VDS = 100 V; RL = 4 Ω;
VGS = 10 V; RG = 6 Ω
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
200 - - V
180 - - V
234V
1- - V
- - 4.4 V
- - 1 µA
- - 500 µA
- 10 100 nA
- 65 77 mΩ
- 182 215 mΩ
- 32.2 - nC
- 6.5 - nC
- 9.6 - nC
- 1870 - pF
- 230 - pF
- 70 - pF
- 12 - ns
- 35 - ns
- 43 - ns
- 45 - ns
- 0.87 1.2 V
- 150 - ns
- 645 - nC
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
8. Revision history
Table 6: Revision history
Document ID
PHP_PHB33NQ20T_1
Release Data sheet Change
date
status
notice
20041108 Product -
data sheet
Doc. number Supersedes
9397 750 14003 -
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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