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PDF MTH15N40 Data sheet ( Hoja de datos )
| Número de pieza | MTH15N40 | |
| Descripción | High Voltage Power MOSFET N-Channel | |
| Fabricantes | Semiconductor Technology | |
| Logotipo |  |
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PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-218
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
ID M
VGS
PD
IL
TJ & Tstg
TL
ELECTRICAL CHARACTERISTICS TA @ 25°C
Parameters
Symbol Test Conditions
Drain Source
Breakdown Voltage
BVDSS ID = 0.25mA VGS = 0
Gate Threshold Voltage
Gate – Body Leakage
Current
VGS(th)
IGSS
ID = 1.0mA VDS = VGS
ID = 1.0mA VDS = VGS TJ = 100°C
VGS = 20V VDS = 0
Zero Gate Voltage
Drain Current
On State Drain Current
IDSS
ID(on)
VDS = 400V VGS = 0
VDS = 320V VGS = 0 TJ = 125ºC
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
rDS(on) ID =8.0A VGS = 10V
gFS ID = 8.0A VDS = 10V
VDS(on) ID = 15.0A VGS = 10V
ID = 8.0A VGS = 10V TJ = 100ºC
VDS(on)
Ciss
Output Capacitance
Reverse Transfer
Capacitance
Coss
Crss
VDS = 25V VGS = 0
f = 1.0MHZ
TYPE: MTH15N40
400
400
15
75
±20
150
-65 to +150
275
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min Typ Max Unit
400 Vdc
2.0 4.5 Vdc
1.5 4.0
100 nA
0.2 mA
1.0 mA
Adc
0.3 Ohms
5.0 mhos
4.5 Vdc
3.5
Vdc
3000 pF
500 pF
200 pF
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MTH15N40.PDF ] | |
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