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기능 SST39SF512-70
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39SF51270 데이터시트, 핀배열, 회로
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512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512 / SST39SF010
FEATURES:
SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories
Data Sheet
• Organized as 64K x8 / 128K x8
• Single 5.0V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
Active Current: 20 mA (typical)
Standby Current: 10 µA (typical)
Sector-Erase Capability
Uniform 4 KByte sectors
Fast Read Access Time:
70 ns
90 ns
Latched Address and Data
Fast Erase and Byte-Program:
Sector-Erase Time: 7 ms (typical)
Chip-Erase Time: 15 ms (typical)
Byte-Program Time: 20 µs (typical)
Chip Rewrite Time:
2 seconds (typical) for SST39SF512
3 seconds (typical) for SST39SF010
Automatic Write Timing
Internal VPP Generation
End-of-Write Detection
Toggle Bit
Data# Polling
TTL I/O Compatibility
JEDEC Standard
Flash EEPROM Pinouts and command sets
Packages Available
32-pin PLCC
32-pin TSOP (8mm x 14mm)
32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF512/010 are CMOS Multi-Purpose Flash
(MPF) manufactured with SSTs proprietary, high perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches. The SST39SF512/010 devices write (Pro-
gram or Erase) with a 5.0V-only power supply. The
SST39SF512/010 device conforms to JEDEC standard
pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39SF512/010 devices provide a maximum Byte-Pro-
gram time of 30 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39SF512/010 devices are suited for applications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system appli-
cations, they significantly improve performance and
rweliawbwility.,DwahtilaeSlohweereintg4pUo.wceor mconsumption. They inher-
ently use less energy during erase and program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF512/010 are offered in 32-pin PLCC packages,
32-pin TSOP, and a 600 mil, 32-pin PDIP is also available.
See Figures 1, 2, and 3 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
©2001 Silicon Storage Technology, Inc.
S71149-03-000 4/01
394
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.




39SF51270 pdf, 반도체, 판매, 대치품
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FUNCTIONAL BLOCK DIAGRAM
512 Kbit / 1 Mbit Multi-Purpose Flash
SST39SF512 / SST39SF010
Data Sheet
X-Decoder
SuperFlash
Memory
Memory Address
Address Buffers & Latches
CE#
OE#
WE#
Control Logic
Y-Decoder
I/O Buffers and Data Latches
DQ7 - DQ0
394 ILL B1.1
SST39SF010 SST39SF512
SST39SF512 SST39SF010
4 3 2 1 32 31 30
A7 A7 5
29 A14
A14
A6 A6 6
28 A13
A13
A5 A5 7
27 A8
A8
A4 A4 8
32-pin PLCC
26 A9
A9
A3 A3 9
25 A11
A11
Top View
A2 A2 10
24 OE#
OE#
A1 A1 11
23 A10
A10
A0 A0 12
22 CE#
CE#
DQ0
DQ0
13 21
14 15 16 17 18 19 20
DQ7
DQ7
394 ILL F02b.4
FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN PLCC
www.DataSheet4U.com
©2001 Silicon Storage Technology, Inc.
4
S71149-03-000 4/01 394

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39SF51270 전자부품, 판매, 대치품
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512 Kbit / 1 Mbit Multi-Purpose Flash
SST39SF512 / SST39SF010
Data Sheet
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
3rd Bus
Write Cycle
4th Bus
Write Cycle
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr1 Data Addr1 Data Addr1 Data Addr1 Data Addr1 Data Addr1 Data
Byte-Program
5555H AAH 2AAAH 55H 5555H A0H BA2 Data
Sector-Erase
Chip-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX3 30H
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID Entry4,5 5555H AAH 2AAAH 55H 5555H 90H
Software ID Exit6
XXH F0H
Software ID Exit6
5555H AAH 2AAAH 55H 5555H F0H
T4.3 394
1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST39SF512.
Addresses A15 - A16 can be VIL or VIH, but no other value, for the Command sequence for
SST39SF010.
2. BA = Program Byte address
3. SAX for Sector-Erase; uses AMS-A12 address lines
AMS = Most significant address
AMS = A15 for SST39SF512 and A16 for SST39SF010
4. The device does not remain in Software Product ID Mode if powered down.
5. With AMS-A1 =0; SST Manufacturers ID= BFH, is read with A0 = 0,
SST39LF/VF512 Device ID = B4H, is read with A0 = 1
SST39LF/VF010 Device ID = B5H, is read with A0 = 1
6. Both Software ID Exit operations are equivalent
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under Absolute Maximum
Stress Ratingsmay cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD + 1.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temp
0°C to +70°C
-40°C to +85°C
VDD
5.0V±10%
5.0V±10%
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
wOuwtpwut.LDoaadta. .S. h. .e. e. .t.4.U. ...c.o. m. . . . . . CL = 30 pF for 70 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 90 ns
See Figures 13 and 14
©2001 Silicon Storage Technology, Inc.
7
S71149-03-000 4/01 394

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부품번호상세설명 및 기능제조사
39SF51270

SST39SF512-70

Silicon Storage Technology
Silicon Storage Technology

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