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PDF MRF837 Data sheet ( Hoja de datos )
| Número de pieza | MRF837 | |
| Descripción | NPN SILICON RF LOW POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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MRF837
NPN SILICON RF LOW POWER TRANSISTOR
DESCRIPTION:
The ASI MRF837 is Designed primerily
for wideband large signal predriver
stages in 800 MHz and UHF frequency
ranges.
FEATURES INCLUDE:
• Min gain 8.0 dB @ 750 mW/870 MHz
• Silicon Nitride passivated
• Low cost Plastic Package
MAXIMUM RATINGS
IC 200 mA
VCBO
36 V
PDISS
1.0 W @ TC = 25 °C
TJ -65 °Cto +150 °C
TSTG
-65 °Cto +150 °C
θJC 40 °C/W
PACKAGE STYLE MACRO-X
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A 4.44 5.21 0.175 0.205
C 1.90 2.54 0.075 0.100
D 0.84 0.99 0.033 0.039
F 0.20 0.30 0.008 0.012
G 0.76 0.14 0.030 0.045
K 7.24 8.13 0.285 0.320
L 10.54 11.43 0.415 0.450
N --- 1.65 --- 0.065
1 = COLLECTOR
2 =EMITER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 5.0 mA
BVCEO
IC = 5.0 mA
BVEBO
IE = 100 µA
ICES VCE = 15 V
hFE VCE = 10 V
IC = 50 mA
MINIMUM TYPICAL MAXIMUM
36
16
4.0
100
30 200
UNITS
V
V
V
µA
---
COB
VCB = 15 V
f = 1.0 MHz
1.8 2.5 pF
PG
ηC
VCE = 12.5 V
POUT = 0.75 W
f = 870 MHz
8.0
55
10
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CAw9w16w0.5D•a(8ta18S)h9e82e-t142U00.c• oFmAX (818) 765-3004
Specifications are subject to change without notice.
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| PDF Descargar | [ Datasheet MRF837.PDF ] | |
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