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PDF AOT402 Data sheet ( Hoja de datos )
| Número de pieza | AOT402 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT402
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOT402 is Pb-free (meets ROHS &
Sony 259 specifications). AOT402L is a Green
Product ordering option. AOT402 and AOT402L are
electrically identical.
TO-220
Features
VDS (V) = 105V
ID = 110 A
(VGS = 10V)
RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A
RDS(ON) < 10 mΩ (VGS = 6V)
D
G DS
Top View
Drain Connected
to Tab
G
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S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
105
±25
110
85
200
100
540
300
150
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
47
0.25
Max
60
0.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
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Alpha & Omega Semiconductor, Ltd.
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AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60 T=25°C
40
T=150°C
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
et4U.com
120
100
80
60
40
20
0
0
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25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
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Alpha & Omega Semiconductor, Ltd.
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOT402.PDF ] | |
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