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PDF MRF6V2150NB Data sheet ( Hoja de datos )
| Número de pieza | MRF6V2150NB | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 6, 10/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for wideband large - signal output and driver applications
with frequencies up to 450 MHz. Devices are unmatched and are suitable for
use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25.5 dB
Drain Efficiency — 69%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts
Output Power
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant
MRF6V2150N
MRF6V2150NB
PREPRODUCTION
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300N
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NB
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5 +110
- 0.5 + 12
- 65 to +150
225
Vdc
Vdc
°C
°C
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
RθJC
TBD
TBD
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
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MRF6V2150N MRF6V2150NB
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF6V2150NB.PDF ] | |
Hoja de datos destacado
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| MRF6V2150N | RF Power Field Effect Transistor | Motorola Semiconductor |
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