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PDF MUN2114T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN2114T1 | |
| Descripción | (MUN2111T1 Series) Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
− Machine Model: Class B
• The SC−59 Package Can be Soldered Using Wave or Reflow
• The Modified Gull−Winged Leads Absorb Thermal wSwtwr.eDastasShDeeut4Ur.icnomg
Soldering Eliminating the Possibility of Damage to the Die
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector − Base Voltage
Collector − Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 230 (Note 1) mW
338 (Note 2)
1.8 (Note 1) °C/W
2.7 (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA
540 (Note 1) °C/W
370 (Note 2)
Thermal Resistance,
Junction−to−Lead
RqJL
264 (Note 1) °C/W
287 (Note 2)
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
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R1
PIN 2 R2
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
3
2
1
SC−59
CASE 318D
PLASTIC
MARKING DIAGRAM
6x M G
G
1
6x = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
See device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 17
1
Publication Order Number:
MUN2111T1/D
1 page  
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
1
IC/IB = 10
0.1
1000
TA = −2°5C
25°C
75°C
100
VCE = 10 V
TA = 75°C
−25°C
25°C
0.01
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) vs. IC
10
80 1
10
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
100
4 100
75°C
25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Capacitance
Figure 6. Output Current vs. Input Voltage
100
VO = 0.2 V
TA = −25°C
10
25°C
75°C
1
0.1
0
10
20 30
40
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage vs. Output Current
50
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5
5 Page 
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
1 1000
75°C
100 TA = −25°C
25°C
0.1
75°C
−25°C 25°C
10
0.01
0
IC/IB = 10
1 2345 6
IC, COLLECTOR CURRENT (mA)
7
Figure 33. Maximum Collector Voltage vs.
Collector Current
1
1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
100
Figure 34. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
IE = 0 V
TA = 25°C
10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 35. Output Capacitance
60
100
25°C
75°C
10
TA = −25°C
1
VO = 5 V
0.1
01
23 45 67 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 36. Output Current vs. Input Voltage
100
25°C
10
TA = −25°C
75°C
VO = 0.2 V
1
0 2 4 6 8 10 12 14 16 18 20
IC, COLLECTOR CURRENT (mA)
Figure 37. Input Voltage vs. Output Current
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11
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MUN2114T1.PDF ] | |
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