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PDF NZT605 Data sheet ( Hoja de datos )
| Número de pieza | NZT605 | |
| Descripción | NPN Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NZT605 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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NZT605
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector
currents to 1.0A and high breakdown voltage.
• Sourced from process 06.
January 2007
4
3
2
1 SOT-223
1. Base 2.4. Collector 3. Emitter
www.DataSheet4U.com
Absolute Maximum Ratings * TC = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
110
VCBO
Collector-Base Voltage
140
VEBO
Emitter-Base Voltage
10
IC Collector Current - Continuous
1.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics * TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cut-off Current
On Characteristics *
IC = 10mA, IB = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 120V, IE = 0
VCE = 120V, IE = 0
VEB = 8.0V, IC = 0
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal characteristics
VCE = 5.0V, IC = 50mA
VCE = 5.0V, IC = 500mA
VCE = 5.0V, IC = 1.0A
VCE = 5.0V, IC = 1.5A
VCE = 5.0V, IC = 2.0A
IC = 250mA, IB = 0.25mA
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA
IC = 1.0A, VCE = 5.0V
fT Transition Frequency
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = 100mA, VCE = 10V, f = 20MHz
Min.
110
140
10
2000
5000
2000
300
200
150
©2006 Fairchild Semiconductor Corporation
NZT605 Rev. C
1
Units
V
V
V
A
°C
Max
10
10
100
Units
V
V
V
nA
nA
nA
100K
1
1.5
1.8
1.7
V
V
V
MHz
www.fairchildsemi.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NZT605.PDF ] | |
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