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PDF 2SK3811 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3811 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3811 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
• High Current Rating: ID(DC) = ±110 A
ORDERING INFORMATION
PART NUMBER
2SK3811-ZP
PACKAGE
TO-263 (MP-25ZP)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
213
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg −55 to +150
EAS 518
IAR 72
EAR 518
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16737EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
VGS = 10 V
2.5 Pulsed
2.0
1.5
1.0
0.5
0
-75
-25 25 75 125
Tch - Channel Temperature - °C
175
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
1000
tr
td(off)
td(on)
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1 10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
2SK3811
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
ID = 110 A
30 12
25
VDD = 32 V
20 V
20 8 V
10
8
15 6
10 VGS 4
5 VDS
2
00
0 50 100 150 200 250 300
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1 10 100
IF - Diode Forward Current - A
1000
Data Sheet D16737EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3811.PDF ] | |
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