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5STB13N6500 데이터시트 PDF




ABB에서 제조한 전자 부품 5STB13N6500은 전자 산업 및 응용 분야에서
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부품번호 5STB13N6500 기능
기능 Bi-Directional Control Thyristor
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5STB13N6500 데이터시트, 핀배열, 회로
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VSM = 6500 V
IT(AV)M = 1405 A
IT(RMS) = 2205 A
ITSM = 22×103 A
VT0 =
1.2 V
rT = 0.6 m
Bi-Directional Control Thyristor
5STB 13N6500
Doc. No. 5SYA1035-03 May 06
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for energy management and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values Note 1
Parameter
Max. surge peak blocking
voltage
Max. repetitive peak
reverse blocking voltage
Symbol Conditions
VSM 1) f = 5 Hz, tp = 10 ms
VRM 1) f = 50 Hz, tp = 10 ms
min typ
max Unit
6500 V
5600 V
Critical rate of rise of
commutating voltage
dv/dtcrit Exp. to 3750 V, Tvj = 125°C
Characteristic values
Parameter
Symbol Conditions
min
Max. leakage current
IRM VRM, Tvj = 125 °C
1) VRM is equal to VSM up to Tvj = 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C
typ
2000 V/µs
max Unit
400 mA
Mechanical data
Maximum rated values Note 1
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Symbol Conditions
FM
a Device unclamped
a Device clamped
Symbol Conditions
m
min
81
typ
90
max
108
50
100
Unit
kN
m/s2
m/s2
min typ max Unit
2.9 kg
Housing thickness
H
Surface creepage distance DS
Air strike distance
Da
FM = 90 kN, Ta = 25 °C
35 35.6 mm
53 mm
22 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




5STB13N6500 pdf, 반도체, 판매, 대치품
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On-state characteristic model:
VT max = A + B IT +C ln(IT +1) + DIT
Valid for iT = 200 – 2000 A
A BCD
1.328
257.0×10-6 -92.0×10-3 28.0×10-3
5STB 13N6500
Fig. 2 On-state characteristics,
Tj = 125°C, 10ms half sine
Fig. 3 On-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current. Switching losses excluded.
Tcase (°C)
130
125
Double-sided cooling
120 DC
180° rectangular
115 180° sine
120° rectangular
110
105
100
95
90
85
80
75
70
0
500
1000
1500
2000
2500
ITAV (A)
Fig. 5 Max. permissible case temperature vs. mean
on-state current. Switching losses ignored.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1035-03 May 06
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5STB13N6500 전자부품, 판매, 대치품
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5STB 13N6500
g
g
Fig. 18 Device Outline Drawing
Related documents:
5SYA 2020
5SYA 2034
5SYA 2036
Design of RC-Snubber for Phase Control Applications
Gate-Drive Recommendations for PCT's
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email
Internet www.abb.com/semiconductors
Doc. No. 5SYA1035-03 May 06

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5STB13N6500

Bi-Directional Control Thyristor

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