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PDF PHP29N08T Data sheet ( Hoja de datos )
| Número de pieza | PHP29N08T | |
| Descripción | TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PHP/PHB29N08T
TrenchMOS™ standard level FET
Rev. 01 — 29 May 2002
Product data
1. Description
N-channel standard level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP29N08T in SOT78 (TO-220AB)
PHB29N08T in SOT404 (D2-PAK).
2. Features
s High noise immunity
s Low on-state resistance.
3. Applications
s Industrial motor control.
4. Pinning information
Table 1: Pinning - SOT78, SOT404 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
mb
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
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Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 2 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 11 V; ID = 14 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 29 A; VDD = 60 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 37.5 V; ID = 29 A;
VGS = 10 V; RG = 5.6 Ω
VSD source-drain (diode forward) voltage IS = 14 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 14 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
75 - - V
70 - - V
34
2.1 -
--
5V
-V
5.4 V
- 0.05 10 µA
- - 500 µA
- 10 100 nA
- 40 50 mΩ
- 96 120 mΩ
- 19 - nC
- 6 - nC
- 9 - nC
- 810 - pF
- 140 - pF
- 85 - pF
- 9.5 - ns
- 70 - ns
- 15 - ns
- 9 - ns
- 0.95 1.2 V
- 50 - ns
65 -
nC
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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10. Revision history
Table 6: Revision history
Rev Date
CPCN
01 20020529
-
Description
Product data; (9397 750 09651)
PHP/PHB29N08T
TrenchMOS™ standard level FET
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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