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PDF 5STP33L2800 Data sheet ( Hoja de datos )
| Número de pieza | 5STP33L2800 | |
| Descripción | Patented free-floating silicon technology | |
| Fabricantes | ABB | |
| Logotipo |  |
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VDSM = 2800 V
ITAVM = 3740 A
ITRMS = 5880 A
ITSM = 60000 A
VT0 = 0.95 V
rT = 0.100 mΩ
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
www.DataShee•t4U.comDesigned for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number
VDRM
VRRM
VRSM1
IDRM
IRRM
dV/dtcrit
5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions
2800 V
2600 V
2200 V f = 50 Hz, tp = 10ms
3000 V
2800 V
2400 V tp = 5ms, single pulse
≤ 400 mA
≤ 400 mA
VDRM
VRRM
Tj = 125°C
1000 V/µs
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force
nom.
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
70 kN
63 kN
84 kN
50 m/s2
100 m/s2
1.45 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
1 page  
5STP 33L2800
www.DataSheet4FUi.gc.om8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
Fig. 12 tq/tq1 = f1(Tj)
Fig. 13 tq/tq1 = f2(-diT/dt)
Fig. 14 tq/tq1 = f3(dv/dt)
tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt)
tq1 :at normalized values (see page 2)
tq : at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Sep. 01
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP33L2800.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 5STP33L2800 | Patented free-floating silicon technology | ABB |
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