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PDF 5STP38N4200 Data sheet ( Hoja de datos )

Número de pieza 5STP38N4200
Descripción Phase Control Thyristor
Fabricantes ABB 
Logotipo ABB Logotipo



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No Preview Available ! 5STP38N4200 Hoja de datos, Descripción, Manual

VDSM = 4200 V
ITAVM = 3960 A
ITRMS = 6230 A
ITSM = 60000 A
VT0 = 0.95 V
rT = 0.13 m
Phase Control Thyristor
5STP 38N4200
Doc. No. 5SYA1012-03 Jan. 02
Patented free-floating silicon technology
Low on-state and switching losses
www.DataSheet4U.cDomesigned for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
VDRM, VRRM f = 50 Hz, tp = 10ms
VRSM1
tp = 5ms, single pulse
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
Characteristic values
Parameter
Symbol
Forwarde leakage current
IDRM
Reverse leakage current
IRRM
5STP 38N4200
4200 V
4600 V
5STP 38N4000
4000 V
4400 V
2000 V/µs
Conditions
VDRM, Tj = 125°C
VRRM, Tj = 125°C
min typ
5STP 38N3600
3600 V
4000 V
max
400
400
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
FM
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
DS
Da
Conditions
min
81
typ
90
max
108
50
100
Unit
kN
m/s2
m/s2
min
56
22
typ
2.9
max
Unit
kg
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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5STP38N4200 pdf
5STP 38N4200
www.DataSheet4U.com
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
IG (t)
100 %
90 %
IGM 2..5 A
IGM
IGon 1.5 IGT
diG/dt 2 A/µs
tr 1 µs
tp(IGM) 5...20µs
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
10 %
tr
diG/dt
tp (IGM)
tp (IGon)
IGon
t
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 5 of 6

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